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vishay tlmk / o / s / y330. document number 83201 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 1 e3 pb pb-free 19225 power smd led in plcc-2 package description the tlm.33.. series is an advanced modification of the vishay tlm.31.. series. it is designed to incorpo- rate larger chips, therefore, capable of withstanding a 50 ma drive current. the package of the tlm.33.. is the plcc-2 (equiva- lent to a size b tantalum capacitor). it consists of a lead frame which is embedded in a white thermoplast. the reflector inside this package is filled up with clear epoxy. features ? utilizing (as) alingap technology available in 8 mm tape luninous intensity, color and forward voltage categorized per packing unit luminous intensity ratio per packing unit i vmax /i vmin 1.6 thermal resistance r = 400 k/w esd class 2 suitable for all soldering methods according to cecc lead-free device applications traffic signals and signs interior and exterior lighting dashboard illumination indicator and backlighting purposes for audio, video, lcd?s switches, symbols, illuminated advertising etc. parts table part color, luminous intensity angle of half intensity ( ? ) technology tlmk3300 red, i v > 200 mcd 60 alingap on gaas tlmk3301 red, i v = (250 to 800) mcd 60 alingap on gaas tlmk3302 red, i v = (400 to 800) mcd 60 alingap on gaas tlmk3303 red, i v = (400 to 1250) mcd 60 alingap on gaas tlms3300 red, i v > 160 mcd 60 alingap on gaas tlms3301 red, i v = (160 to 400) mcd 60 alingap on gaas tlms3302 red, i v = (250 to 800) mcd 60 alingap on gaas tlmo3300 soft orange, i v > 200 mcd 60 alingap on gaas tlmo3301 soft orange, i v = (250 to 640) mcd 60 alingap on gaas tlmo3302 soft orange, i v = (320 to 800) mcd 60 alingap on gaas
www.vishay.com 2 document number 83201 rev. 1.4, 31-aug-04 vishay tlmk / o / s / y330. vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified tlmy33.., tlmo33.., tlmk33.., tlms33.. optical and electrical characteristics t amb = 25 c, unless otherwise specified red tlmk33.. tlmo3303 soft orange, i v = (400 to 1250) mcd 60 alingap on gaas TLMY3300 yellow, i v > 200 mcd 60 alingap on gaas tlmy3301 yellow, i v = (250 to 640) mcd 60 alingap on gaas tlmy3302 yellow, i v = (320 to 800) mcd 60 alingap on gaas tlmy3303 yellow, i v = (400 to 1250) mcd 60 alingap on gaas parameter test condition symbol value unit reverse voltage v r 5v dc forward current t amb 73 c (400 k/w) i f 50 ma power dissipation t amb 73 c (400 k/w) p v 130 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ ambient mounted on pc board (pad size > 16 mm 2 ) r thja 400 k/w parameter test condition part symbol min ty p. max unit luminous intensity i f = 50 ma tlmk3300 i v 200 500 mcd tlmk3301 i v 250 800 mcd tlmk3302 i v 400 800 mcd tlmk3303 i v 400 1250 mcd luminous flux/luminous intensity v /i v 3mlm/ mcd dominant wavelength i f = 50 ma d 611 617 622 nm peak wavelength i f = 50 ma p 624 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 18 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage i f = 50 ma v f 1.85 2.1 2.55 v reverse current v r = 5 v v r 0.01 10 a part color, luminous intensity angle of half intensity ( ? ) technology
vishay tlmk / o / s / y330. document number 83201 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 3 red tlms33.. soft orange tlmo33.. parameter test condition part symbol min ty p. max unit luminous intensity i f = 50 ma tlms3300 i v 160 300 mcd tlms3301 i v 160 400 mcd tlms3302 i v 250 800 mcd luminous flux/luminous intensity v /i v 3mlm/ mcd dominant wavelength i f = 50 ma d 626 630 638 nm peak wavelength i f = 50 ma p 641 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 17 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage i f = 50 ma v f 1.85 2.1 2.55 v reverse current v r = 5 v v r 0.01 10 a parameter test condition part symbol min ty p. max unit luminous intensity i f = 50 ma tlmo3300 i v 200 500 mcd tlmo3301 i v 250 640 mcd tlmo3302 i v 320 800 mcd tlmo3303 i v 400 1250 mcd luminous flux/luminous intensity v /i v 3mlm/ mcd dominant wavelength i f = 50 ma d 600 605 611 nm peak wavelength i f = 50 ma p 611 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 17 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage i f = 50 ma v f 1.85 2.1 2.55 v reverse current v r = 5 v v r 0.01 10 a
www.vishay.com 4 document number 83201 rev. 1.4, 31-aug-04 vishay tlmk / o / s / y330. vishay semiconductors yellow tlmy33.. forward voltage classification color classification luminous intensit y classification parameter test condition part symbol min ty p. max unit luminous intensity i f = 50 ma TLMY3300 i v 200 450 mcd tlmy3301 i v 250 640 mcd tlmy3302 i v 320 800 mcd tlmy3303 i v 400 1250 mcd luminous flux/luminous intensity v /i v 3mlm/ mcd dominant wavelength i f = 50 ma d 583 588 594 nm peak wavelength i f = 50 ma p 590 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 18 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage i f = 50 ma v f 1.85 2.1 2.55 v reverse current v r = 5 v v r 0.01 10 a group forward voltage (v) min max 11.852.25 22.152.55 group dominant wavelength (nm) red soft orange ye l l o w min max min max min max 1 611 618 598 601 581 584 2 614 622 600 603 583 586 3 602 605 585 588 4 604 607 587 590 5 606 609 589 592 6 608 611 591 594 group luminous intensity (mcd) min max xa 160 250 xb 200 320 ya 250 400 yb 320 500 za 400 630 zb 500 800 0a 630 1000 0b 800 1250
vishay tlmk / o / s / y330. document number 83201 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 5 group name on label one packing unit/tape contains only one classification group of luminous intensity, color and forward voltage only one single classification groups is not available the given groups are not order codes , customer specific group combinat ions require marketing agreement no color subgrouping for super red typical characteristics (t amb = 25 c unless otherwise specified) luminous intensity group halfgroup wavelength forward voltage zb21 figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature 0 20 40 60 80 100 120 140 160 180 200 0 25 50 75 100 125 16783 r thja = 400k/w t amb ? ambient temperature ( q c ) p ?power dissipation (mw) v 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 16784 r thja = 400k/w f i ? forward current ( ma ) t amb ? ambient temperature ( q c ) figure 3. rel. luminous intensity vs. angular displacement figure 4. relative intensity vs. wavelength 0.4 0.2 0 0.2 0.4 0.6 95 10319 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative luminous intensity vre l 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 540 550 560 570 580 590 600 610 620 630 640 - wavelength ( nm ) 16008 i - relative luminous intensity vrel yellow
www.vishay.com 6 document number 83201 rev. 1.4, 31-aug-04 vishay tlmk / o / s / y330. vishay semiconductors figure 5. change of forward voltage vs. ambient temperature figure 6. relative luminous intensity vs. amb. temperature figure 7. change of dominant wavelength vs. ambient temperature ?200 ?150 ?100 ?50 0 50 100 150 200 250 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17015 v ? change of forward voltage (mv) f 10 ma 30 ma 50 ma yellow 0.0 0.5 1.0 1.5 2.0 2.5 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17016 i ?relative luminous intensity vrel yellow ?6 ?4 ?2 0 2 4 6 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17017 ? change of dom. wavelength (nm) d yellow figure 8. relative luminous intensity vs. forward current figure 9. change of dominant wavelength vs. forward current figure 10. relative intensity vs. wavelength 0.01 0.10 1.00 10.00 1.00 10.00 100.00 i f ? forward current ( ma ) 17018 i ?relative luminous intensity vrel yellow ?1.5 ?1.0 ?0.5 0.0 0.5 1.0 1.5 10 20 30 40 50 60 70 80 90 100 17019 ? change of dom. wavelength (nm) d i f ? forward current ( ma ) yellow 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 560 570 580 590 600 610 620 630 640 650 660 16314 soft orange i - relative luminous intensity vrel - wavelength ( nm )
vishay tlmk / o / s / y330. document number 83201 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 7 figure 11. change of forward voltage vs. ambient temperature figure 12. relative luminous intensity vs. amb. temperature figure 13. change of dominant wavelength vs. ambient temperature ?200 ?150 ?100 ?50 0 50 100 150 200 250 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17020 v ? change of forward voltage (mv) f 10 ma 30 ma 50 ma soft orange 0.0 0.5 1.0 1.5 2.0 2.5 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17021 i ?relative luminous intensity vrel soft orange ?6 ?4 ?2 0 2 4 6 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17022 ? change of dom. wavelength (nm) d soft orange figure 14. relative luminous intensity vs. forward current figure 15. change of dominant wavelength vs. forward current figure 16. relative intensity vs. wavelength 0.01 0.10 1.00 10.00 1.00 10.00 100.00 i f ? forward current ( ma ) 17023 i ?relative luminous intensity vrel soft orange ?1.5 ?1.0 ?0.5 0.0 0.5 1.0 1.5 10 20 30 40 50 60 70 80 90 100 17024 ? change of dom. wavelength (nm) d i f ? forward current ( ma ) soft orange 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 570 580 590 600 610 620 630 640 650 660 670 - wavelength ( nm ) 16007 i - relative luminous intensity vrel red
www.vishay.com 8 document number 83201 rev. 1.4, 31-aug-04 vishay tlmk / o / s / y330. vishay semiconductors figure 17. change of forward voltage vs. ambient temperature figure 18. relative luminous intensity vs. amb. temperature figure 19. change of dominant wavelength vs. ambient temperature ?200 ?150 ?100 ?50 0 50 100 150 200 250 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17034 v ? change of forward voltage (mv) f 10 ma 30 ma 50 ma red 0.0 0.5 1.0 1.5 2.0 2.5 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17035 i ?relative luminous intensity vrel red ?6 ?4 ?2 0 2 4 6 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17036 ? change of dom. wavelength (nm) d red figure 20. relative luminous intensity vs. forward current figure 21. change of dominant wavelength vs. forward current figure 22. relative intensity vs. wavelength 0.01 0.10 1.00 10.00 1.00 10.00 100.00 i f ? forward current ( ma ) 17037 i ?relative luminous intensity vrel red ?1.5 ?1.0 ?0.5 0.0 0.5 1.0 1.5 10 20 30 40 50 60 70 80 90 100 17038 ? change of dom. wavelength (nm) d i f ? forward current ( ma ) red 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 600 610 620 630 640 650 660 670 680 690 700 17045 i - relative luminous intensity vrel red - wavelength ( nm )
vishay tlmk / o / s / y330. document number 83201 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 9 figure 23. forward current vs. forward voltage figure 24. forward current vs. forward voltage figure 25. change of forward voltage vs. ambient temperature 0 10 20 30 40 50 60 70 80 90 100 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 v f ? forward voltage ( v ) 17046 f i ? forward current ( ma ) yellow soft orange red 0 10 20 30 40 50 60 70 80 90 100 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 v f - forward voltag e(v) 17047 f i - forward current ( ma ) red -200 -150 -100 -50 0 50 100 150 200 250 -50 -25 0 25 50 75 100 t amb - ambient temperature ( c) 17039 v - change of forward voltage ( mv ) f 10 ma 30 ma 50 ma red figure 26. relative luminous in tensity vs. amb. temperature figure 27. change of dominant wavelength vs. ambient temperature figure 28. relative luminous intensity vs. forward current 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 t amb - ambient temperature ( c) 17040 i - relative luminous intensity vrel red -5 -4 -3 -2 -1 0 1 2 3 -50 -25 0 25 50 75 100 t amb - ambient temperature ( c) 17041 - change of dom. w avelength (nm) ? d red 0.01 0 1 10 1 10 100 i f - forward current ( ma ) 17042 i - relative luminous intensity vrel red
www.vishay.com 10 document number 83201 rev. 1.4, 31-aug-04 vishay tlmk / o / s / y330. vishay semiconductors package dimensions in mm figure 29. change of dominant wavelength vs. forward current -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 10 20 30 40 50 60 70 80 90 100 17043 i f - forward current ( ma ) red - change of dom. w avelength (nm) ? d figure 30. forward current vs. pulse length 0.00 0.02 0.04 0.06 0.08 0.10 0.12 t p - pulse length (s) i - forward current (a) f 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 t p /t = 0.005 0.05 0.5 17044 95 11314 mounting pad layout 3.5 0.2 0.85 1.65 + 0.10 - 0.05 pin identification 2.8 + 0.15 2.2 ? 2.4 3 + 0.15 1.2 2.6 (2.8) 1.6 (1.9) 4 4 area covered with solder resist dimensions: ir and vaporphase (wave soldering) technical drawings according to din specifications drawing-no. : 6.541-5025.01-4 issue: 7; 05.04.04 ca
vishay tlmk / o / s / y330. document number 83201 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 11 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423

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